IMBG120R090M1HXTMA1
- Manufacturer:
- Infineon Technologies
- Part Number:
- IMBG120R090M1HXTMA1
- Category:
- Single FETs, MOSFETs
- Description:
- SICFET N-CH 1.2KV 26A TO263
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 2,797
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- Infineon Technologies
- Category :
- Single FETs, MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 26A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- Standard
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 23 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 763 pF @ 800 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) :
- 136W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 125mOhm @ 8.5A, 18V
- Supplier Device Package :
- PG-TO263-7-12
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +18V, -15V
- Vgs(th) (Max) @ Id :
- 5.7V @ 3.7mA
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From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country.
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