SI8429DB-T1-E1
- Manufacturer:
- Vishay / Siliconix
- Part Number:
- SI8429DB-T1-E1
- Category:
- Single FETs, MOSFETs
- Description:
- MOSFET P-CH 8V 11.7A 4MICROFOOT
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 20,864
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- Vishay / Siliconix
- Category :
- Single FETs, MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 11.7A (Tc)
- Drain to Source Voltage (Vdss) :
- 8 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.2V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 26 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1640 pF @ 4 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 4-XFBGA, CSPBGA
- Power Dissipation (Max) :
- 2.77W (Ta), 6.25W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 35mOhm @ 1A, 4.5V
- Supplier Device Package :
- 4-Microfoot
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±5V
- Vgs(th) (Max) @ Id :
- 800mV @ 250µA
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