IMW65R027M1HXKSA1
- Manufacturer:
- Infineon Technologies
- Part Number:
- IMW65R027M1HXKSA1
- Category:
- Single FETs, MOSFETs
- Description:
- MOSFET 650V NCH SIC TRENCH
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 146
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- Infineon Technologies
- Category :
- Single FETs, MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 47A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 62 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2131 pF @ 400 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 189W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 34mOhm @ 38.3A, 18V
- Supplier Device Package :
- PG-TO247-3-41
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +23V, -5V
- Vgs(th) (Max) @ Id :
- 5.7V @ 11mA
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From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country.
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