SCT2H12NZGC11

Manufacturer:
ROHM Semiconductor
Part Number:
SCT2H12NZGC11
Category:
Single FETs, MOSFETs
Description:
SICFET N-CH 1700V 3.7A TO3PFM
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
442

Specifications

TYPE
DESCRIPTION
Manufacturer :
ROHM Semiconductor
Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
3.7A (Tc)
Drain to Source Voltage (Vdss) :
1700 V
Drive Voltage (Max Rds On, Min Rds On) :
18V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds :
184 pF @ 800 V
Mounting Type :
Through Hole
Operating Temperature :
175°C (TJ)
Package / Case :
TO-3PFM, SC-93-3
Power Dissipation (Max) :
35W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.5Ohm @ 1.1A, 18V
Supplier Device Package :
TO-3PFM
Technology :
SiCFET (Silicon Carbide)
Vgs (Max) :
+22V, -6V
Vgs(th) (Max) @ Id :
4V @ 900µA

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