SIDR626LDP-T1-RE3

Manufacturer:
Vishay / Siliconix
Part Number:
SIDR626LDP-T1-RE3
Category:
Single FETs, MOSFETs
Description:
MOSFET N-CH 60V 45.6A/2.4A PPAK
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
11,949

Specifications

TYPE
DESCRIPTION
Manufacturer :
Vishay / Siliconix
Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
45.6A (Ta), 2.4A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
5900 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® SO-8
Power Dissipation (Max) :
6.25W (Ta), 125W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.5mOhm @ 20A, 10V
Supplier Device Package :
PowerPAK® SO-8DC
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 250µA

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