BSC190N12NS3GATMA1

Manufacturer:
Infineon Technologies
Part Number:
BSC190N12NS3GATMA1
Category:
Single FETs, MOSFETs
Description:
MOSFET N-CH 120V 8.6A/44A TDSON
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
41,124

Specifications

TYPE
DESCRIPTION
Manufacturer :
Infineon Technologies
Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
8.6A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss) :
120 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2300 pF @ 60 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Power Dissipation (Max) :
69W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
19mOhm @ 39A, 10V
Supplier Device Package :
PG-TDSON-8-1
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 42µA

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