XPN9R614MC,L1XHQ

Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Part Number:
XPN9R614MC,L1XHQ
Category:
Single FETs, MOSFETs
Description:
MOSFET P-CH 40V 40A 8TSON
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
13,771

Specifications

TYPE
DESCRIPTION
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
40A (Ta)
Drain to Source Voltage (Vdss) :
40 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
3000 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
175°C
Package / Case :
8-PowerVDFN
Power Dissipation (Max) :
840mW (Ta), 100W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
9.6mOhm @ 20A, 10V
Supplier Device Package :
8-TSON Advance-WF (3.1x3.1)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
+10V, -20V
Vgs(th) (Max) @ Id :
2.1V @ 500µA

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