SISS63DN-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Part Number:
- SISS63DN-T1-GE3
- Category:
- Single FETs, MOSFETs
- Description:
- MOSFET P-CH 20V 35.1/127.5A PPAK
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 32,694
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- Vishay / Siliconix
- Category :
- Single FETs, MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 35.1A (Ta), 127.5A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 236 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7080 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8S
- Power Dissipation (Max) :
- 5W (Ta), 65.8W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 2.7mOhm @ 15A, 10V
- Supplier Device Package :
- PowerPAK® 1212-8S
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
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From $40.00 basic shipping fee depend on zone and country. -
From $40.00 basic shipping fee depend on zone and country.
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